POINT-CONTACT SPECTROSCOPY ON TUNABLE CONSTRICTIONS IN GAAS

被引：9

作者：

BEVER, T ^{[1
]}

WIECK, AD ^{[1
]}

VONKLITZING, K ^{[1
]}

PLOOG, K ^{[1
]}

WYDER, P ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,F-38042 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.44.6507

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In quasi-one-dimensional channels formed in the two-dimensional electron gas of an AlxGa1-xAs/GaAs heterostructure, the second derivative d2V/dI2 of the voltage-current characteristic is measured at low temperatures as a function of the voltage drop V over the channel length. In increasing the lateral confinement, strong resonant structures appear at voltages V that correspond to energies of GaAs phonon density-of-states maxima for acoustical as well as optical phonons. Compared with metal point-contact spectroscopy, this technique offers reproducible tunability of buried point contacts.

引用

页码：6507 / 6510

页数：4

共 22 条

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