100-MUM-WIDE SILICON-ON-INSULATOR STRUCTURES BY SI MOLECULAR-BEAM EPITAXY GROWTH ON POROUS SILICON

被引:17
作者
LIN, TL [1 ]
CHEN, SC [1 ]
KAO, YC [1 ]
WANG, KL [1 ]
IYER, S [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.96789
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1793 / 1795
页数:3
相关论文
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