ALGAAS DOPING SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：1

作者：

ACKLEY, DE

LEE, H

NOURI, N

COLVARD, C

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 22期

关键词：

D O I：

10.1063/1.99613

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1883 / 1885

页数：3

共 7 条

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[4] HIGH-GAIN, HIGH-FREQUENCY ALGAAS/GAAS GRADED BAND-GAP BASE BIPOLAR-TRANSISTORS WITH A BE DIFFUSION SETBACK LAYER IN THE BASE [J].

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BETHEA, CG .

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[7]

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