FRANZ-KELDYSH EFFECT IN SILICON P-N JUNCTION

被引：1
作者：
HAMAKAWA, Y
NISHINO, T
YAMAGUCHI, J
机构：
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1965年 / 20卷 / 10期
关键词：
D O I：
10.1143/JPSJ.20.1958
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1958 / +
页数：1
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