FRANZ-KELDYSH EFFECT IN SILICON P-N JUNCTION

被引：1
作者：
HAMAKAWA, Y
NISHINO, T
YAMAGUCHI, J
机构：
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1965年 / 20卷 / 10期
关键词：
D O I：
10.1143/JPSJ.20.1958
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1958 / +
页数：1
相关论文
共 8 条
[1]  
FRANZ W, 1958, Z NATURFORSCH PT A, V13, P484
[2]   FRANZ-KELDYSH EFFECT IN SPACE-CHARGE REGION OF A GERMANIUM P-N JUNCTION [J].
FROVA, A ;
HANDLER, P .
PHYSICAL REVIEW, 1965, 137 (6A) :1857-&
[3]   SHIFT OF OPTICAL ABSORPTION EDGE BY ELECTRIC FIELD - MODULATION OF LIGHT IN SPACE-CHARGE REGION OF GE P-N JUNCTION ( 90 PERCENT MODULATION AT LAMBDA - 1.56 MU E ) [J].
FROVA, A ;
HANDLER, P .
APPLIED PHYSICS LETTERS, 1964, 5 (01) :11-&
[4]  
KELDYSH LV, 1958, SOV PHYS JETP-USSR, V7, P788
[5]   AVALANCHE BREAKDOWN IN SILICON [J].
MCKAY, KG .
PHYSICAL REVIEW, 1954, 94 (04) :877-884
[6]   OPTICAL ABSORPTION EDGE IN GAAS AND ITS DEPENDENCE ON ELECTRIC FIELD [J].
MOSS, TS .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2136-&
[7]  
VAVILOV VS, 1960, SOV PHYS-SOLID STATE, V2, P1746
[8]   ELECTRIC FIELD INDUCED LIGHT ABSORPTION IN CDS [J].
WILLIAMS, R .
PHYSICAL REVIEW, 1960, 117 (06) :1487-1490
1