PHOTOLUMINESCENCE IN HIGH-RESISTIVITY CDTE-IN

被引:99
作者
BARNES, CE
ZANIO, K
机构
[1] SANDIA LABS,ALBUQUERQUE,NM 87115
[2] HUGHES RES LABS,MALIBU,CA 90265
关键词
D O I
10.1063/1.322145
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3959 / 3964
页数:6
相关论文
共 34 条
[1]  
AGRINSKAYA NV, 1971, SOV PHYS SEMICOND+, V5, P762
[2]   ANNEALING OF ELECTRON-IRRADIATED GAAS [J].
AUKERMAN, LW ;
GRAFT, RD .
PHYSICAL REVIEW, 1962, 127 (05) :1576-&
[3]  
BARNES C, TO BE PUBLISHED
[4]  
Barnes C. E., 1970, Radiation Effects, V2, P243, DOI 10.1080/00337576908243986
[5]   CHARACTERIZATION OF TRANSPORT PROPERTIES OF HALOGEN-DOPED CDTE USED FOR GAMMA-RAY DETECTORS [J].
BELL, RO ;
WALD, FV ;
CANALI, C ;
NAVA, F ;
OTTAVIAN.G .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (01) :331-341
[6]  
Bryant F. J., 1971, Radiation Effects, V9, P115, DOI 10.1080/00337577108242042
[7]   BROAD-BAND CATHODOLUMINESCENCE OF CADMIUM TELLURIDE [J].
BRYANT, FJ ;
TOTTERDELL, DH .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 10 (01) :K75-+
[8]   SELF-COMPENSATION IN CDTE [J].
CANALI, C ;
OTTAVIANI, G ;
BELL, RO ;
WALD, FV .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (10) :1405-1413
[9]   RELATIVE MAGNITUDE OF DIFFUSION CONSTANTS OF CADMIUM VACANCIES AND INDIUM-CADMIUM VACANCY PAIRS IN CDS AND CDTE [J].
CHERN, SS ;
KROGER, FA .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01) :215-222
[10]  
Curie D., 1967, PHYSICS CHEM 2 6 COM, P435