QUANTUM TRANSPORT STUDIES OF GRAIN-BOUNDARIES IN P-HG1-XMNXTE

被引:46
作者
GRABECKI, G
DIETL, T
SOBKOWICZ, P
KOSSUT, J
ZAWADZKI, W
机构
[1] Polish Acad of Sciences, Inst of, Physics, Warsaw, Pol, Polish Acad of Sciences, Inst of Physics, Warsaw, Pol
关键词
ELECTRIC CONDUCTIVITY - ELECTRONS - Transport Properties - RAMAN SCATTERING;
D O I
10.1063/1.95102
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors show that charged traps at grain boundaries in p-Hg//1// minus //xMn//xTe lead to the formation of an inversion layer. The layers are dominant channels of electrical conductivity at low temperatures. By means of the Shubnikov-de Haas effect measurements the authors demonstrate that the electron gas in the layer forms a quasi-two-dimensional system. They determine electric subband populations and effective masses and they establish parameters of the potential well at the grain boundary within a simple model.
引用
收藏
页码:1214 / 1216
页数:3
相关论文
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