ELASTIC STRAIN AND MISFIT DISLOCATION DENSITY IN SI0.92GE0.08 FILMS ON SILICON SUBSTRATES

被引:140
作者
KASPER, E [1 ]
HERZOG, HJ [1 ]
机构
[1] FORSCH INST ULM,AEG TELEFUNKEN,ULM,FED REP GER
关键词
D O I
10.1016/0040-6090(77)90443-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:357 / 370
页数:14
相关论文
共 23 条
[11]   SI-GE HETEROEPITAXIAL STRUCTURES EVAPORATED IN ULTRA-HIGH VACUUM [J].
PFEIFER, J ;
SZENTPALI, B ;
VARGA, L .
THIN SOLID FILMS, 1972, 11 (01) :59-+
[12]   INTERFACE STRESS OF ALXGA1-XAS-GAAS LAYER STRUCTURES [J].
REINHART, FK ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3171-3175
[13]  
ROZGONYI GA, 1974, J CRYST GROWTH, V27, P106
[14]   X-RAY CHARACTERIZATION OF STRESSES AND DEFECTS IN THIN-FILMS AND SUBSTRATES [J].
ROZGONYI, GA ;
MILLER, DC .
THIN SOLID FILMS, 1976, 31 (1-2) :185-216
[15]  
STACK GA, 1975, J APPL PHYS, V46, P46
[16]   MISFIT DISLOCATION ENERGY IN EPITAXIAL OVERGROWTHS OF FINITE THICKNESS [J].
VANDERMERWE, JH ;
VANDERBE.NG .
SURFACE SCIENCE, 1972, 32 (01) :1-+
[17]   EQUILIBRIUM STRUCTURE OF A THIN EPITAXIAL FILM [J].
VANDERMERWE, JH .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (11) :4725-+
[18]   CRYSTAL INTERFACES .1. SEMI-INFINITE CRYSTALS [J].
VANDERMERWE, JH .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) :117-&
[19]   CRYSTAL INTERFACES .2. FINITE OVERGROWTHS [J].
VANDERMERWE, JH .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) :123-&
[20]   STRUCTURE OF EPITAXIAL CRYSTAL INTERFACES [J].
VANDERMERWE, JH .
SURFACE SCIENCE, 1972, 31 (01) :198-+