ELASTIC STRAIN AND MISFIT DISLOCATION DENSITY IN SI0.92GE0.08 FILMS ON SILICON SUBSTRATES

被引：140

作者：

KASPER, E ^{[1
]}

HERZOG, HJ ^{[1
]}

机构：

[1] FORSCH INST ULM,AEG TELEFUNKEN,ULM,FED REP GER

来源：

THIN SOLID FILMS | 1977年 / 44卷 / 03期

关键词：

D O I：

10.1016/0040-6090(77)90443-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：357 / 370

页数：14

共 23 条

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J].

ABBINK, HC ;

BROUDY, RM ;

MCCARTHY, GP .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4673-&

[2] EPITAXIAL-GROWTH OF SILICON-GERMANIUM SINGLE-CRYSTALS [J].

AHARONI, H ;

BARLEV, A ;

BLECH, IA ;

MARGALIT, S .

THIN SOLID FILMS, 1972, 11 (02) :313-&

[3] HETEROEPITAXY OF GERMANIUM THIN-FILMS ON SILICON BY ION SPUTTERING [J].

ALEKSANDROV, LN ;

LOVYAGIN, RN ;

PCHELYAKOV, OP ;

STENIN, SI .

JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) :298-301

[4] INVESTIGATION OF GERMANIUM FILMS AND GE-SI INTERFACE STRUCTURE BY TRANSMISSION ELECTRON-MICROSCOPY [J].

ASEEV, AL ;

VASIN, OI ;

STENIN, SI ;

SOLDATENKO, NN ;

TKHORIK, YA .

THIN SOLID FILMS, 1975, 30 (01) :73-82

[5] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J].

BRENNER, A ;

SENDEROFF, S .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02) :105-123

[6] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES [J].

CULLIS, AG ;

BOOKER, GR .

JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) :132-&

[7]

Kasper E., 1976, Wissenschaftliche Berichte AEG-Telefunken, V49, P213

[8] ONE-DIMENSIONAL SIGE SUPERLATTICE GROWN BY UHV EPITAXY [J].

KASPER, E ;

HERZOG, HJ ;

KIBBEL, H .

APPLIED PHYSICS, 1975, 8 (03) :199-205

[9] ACCOMMODATION OF MISFIT ACROSS INTERFACE TEBWEEN CRYSTALS OF SEMICONDUCTING ELEMENTS OR COMPOUNDS [J].

MATTHEWS, JW ;

MADER, S ;

LIGHT, TB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3800-&

[10] DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J].

MATTHEWS, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :126-133

← 1 2 3 →