1.4 kV 4H-SiC PiN diode with a robust non-uniform floating guard ring termination

This paper presents the design and fabrication of an effective, robust and process-tolerant floating guard ring termination on high voltage 4H-SiC PiN diodes. Different design factors were studied by numerical simulations and evaluated by device fabrication and measurement. The device fabrication was based on a 12 mu m thick drift layer with an N-type doping concentration of 8 x 10(15) cm(-3). P+ regions in the termination structure and anode layer were formed by multiple aluminum implantations. The fabricated devices present a highest breakdown voltage of 1.4 kV, which is higher than the simulated value. For the fabricated 15 diodes in one chip, all of them exceeded the breakdown voltage of 1 kV and six of them reached the desired breakdown value of 1.2 kV.