SILICON MBE - FROM STRAINED-LAYER EPITAXY TO DEVICE APPLICATION

被引：20

作者：

BEAN, JC

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 70卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(84)90300-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：444 / 451

页数：8

共 37 条

[1] RECENT DEVELOPMENTS IN SILICON MOLECULAR-BEAM EPITAXY [J].

BEAN, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :540-545

[2] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :643-646

[3] GROWTH OF THIN SILICON FILMS ON SAPPHIRE AND SPINEL BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :741-743

[4] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

SHENG, TT ;

FELDMAN, LC ;

FIORY, AT ;

LYNCH, RT .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :102-104

[5] SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS [J].

BEAN, JC ;

SADOWSKI, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02) :137-142

[6] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[7]

BEAN JC, 1982, J PHYS-PARIS, V43, P153, DOI 10.1051/jphyscol:1982519

[8] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J].

BEAN, JC ;

BECKER, GE ;

PETROFF, PM ;

SEIDEL, TE .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :907-913

[9]

BEAN JC, 1981, IMPURITY DOPING PROC, pCH4

[10]

BEAN JC, 1984, UNPUB 1984 P FALL S

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