EVIDENCE FOR A DENSE ELECTRON-HOLE PLASMA CLOSE TO THE MELTING PHASE-TRANSITION IN SILICON

被引：5

作者：

FAUCHET, PM

SIEGMAN, AE

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 11期

关键词：

D O I：

10.1063/1.94229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1043 / 1045

页数：3

共 14 条

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VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

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[2] DUAL-WAVELENGTH LASER ANNEALING [J].

AUSTON, DH ;

VENKATESAN, TNC ;

GOLOVCHENKO, JA .

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[3]

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[4]

Gamo K., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P97

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LIETOILA, A ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :624-626

[6] COMPUTER MODELING OF THE TEMPERATURE RISE AND CARRIER CONCENTRATION INDUCED IN SILICON BY NANOSECOND LASER-PULSES [J].

LIETOILA, A ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3207-3213

[7] PHASE-TRANSFORMATION ON AND CHARGED-PARTICLE EMISSION FROM A SILICON CRYSTAL-SURFACE, INDUCED BY PICOSECOND LASER-PULSES [J].

LIU, JM ;

YEN, R ;

KURZ, H ;

BLOEMBERGEN, N .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :755-757

[8] PICOSECOND TIME-RESOLVED PLASMA AND TEMPERATURE-INDUCED CHANGES OF REFLECTIVITY AND TRANSMISSION IN SILICON [J].

LIU, JM ;

KURZ, H ;

BLOEMBERGEN, N .

APPLIED PHYSICS LETTERS, 1982, 41 (07) :643-646

[9]

LIU JM, 1982, NOV MRS S A BOST

[10] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON [J].

LO, HW ;

COMPAAN, A .

PHYSICAL REVIEW LETTERS, 1980, 44 (24) :1604-1607

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