INVESTIGATIONS ON INFLUENCE OF DIHEDRAL ANGLE DISTRIBUTION ON ATOMIC RADIAL-DISTRIBUTION FUNCTION IN AMORPHOUS-GE AND SI

被引：4

作者：

BOISSONADE, J ^{[1
]}

GANDAIS, M ^{[1
]}

THEYE, ML ^{[1
]}

机构：

[1] UNIV PARIS 06, LAB OPTIQUE SOLIDES, 4 PL JUSSIEU, 75230 PARIS, FRANCE

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1974年 / 16卷 / 01期

关键词：

D O I：

10.1016/0022-3093(74)90072-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：101 / 109

页数：9

共 17 条

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[3]

CONNELL GAN, TO BE PUBLISHED

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GANDAIS, M ;

THEYE, ML ;

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[5] SCANNING ELECTRON-DIFFRACTION STUDY OF VAPOR-DEPOSITED AND ION-IMPLANTED THIN-FILMS OF GE (I) [J].

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Herman F., 1972, J NON-CRYST SOLIDS, V8-10, P359, DOI [10.1016/0022-3093(72)90160-3, DOI 10.1016/0022-3093(72)90160-3]

[8] ELECTRONIC PROPERTIES OF COMPLEX CRYSTALLINE AND AMORPHOUS PHASES OF GE AND SI .1. DENSITY OF STATES AND BAND STRUCTURES [J].

JOANNOPOULOS, JD ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 7 (06) :2644-2657

[9]

MOSS SC, 1970, 10TH P INT C PHYS SE, P658

[10]

Paul W., 1972, J NONCRYSTALLINE SOL, V8-10, P381, DOI [10.1016/0022-3093(72)90164-0, DOI 10.1016/0022-3093(72)90164-0]

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