RAMAN-SPECTROSCOPIC ANALYSIS OF THE FREE-CARRIER CONCENTRATION IN GAAS OVAL DEFECTS

被引：9

作者：

DOBAL, PS

BIST, HD

MEHTA, SK

JAIN, RK

机构：

[1] INDIAN INST TECHNOL,CTR LASER TECHNOL,KANPUR 208016,UTTAR PRADESH,INDIA

[2] SOLID STATE PHYS LAB,DELHI,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 08期

关键词：

D O I：

10.1063/1.358573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The free carrier concentration at oval defects in silicon-doped GaAs grown by molecular beam epitaxy has been studied on the basis of longitudinal-optical (LO)-phonon plasmon coupled mode frequency through Raman spectroscopy. The carrier concentration at the oval defects was found to be lower as compared to the defect-free regions. The variations of surface depletion width with the concentration calculated from LO phonon intensities was also used to obtain the carrier concentration at the oval defects. Excellent agreement was found between the carrier concentrations obtained from these two methods. © 1995 American Institute of Physics.

引用

页码：3934 / 3937

页数：4