INFLUENCE OF IMPURITY SCATTERING ON THE TRAVERSAL TIME AND CURRENT-VOLTAGE CHARACTERISTICS OF RESONANT TUNNELING STRUCTURES

被引：3

作者：

ANWAR, AFM ^{[1
]}

LACOMB, RB ^{[1
]}

CAHAY, M ^{[1
]}

机构：

[1] UNIV CINCINNATI,DEPT ELECT & COMP ENGN,NANOELECTR LAB,CINCINNATI,OH 45221

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1992年 / 11卷 / 01期

关键词：

D O I：

10.1016/0749-6036(92)90374-E

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The transmission line technique to solve the time independent Schrödinger equation is modified to include the effect of elastic scattering by introducing a scattering impedance Zs = 4jV0/ℏ. The method is applied to calculate the current-voltage and traversal time characteristics of double barrier resonant tunneling structures. The peak current density for a random distribution of scatterers in the quantum well decreases while it increases for scattering at a fixed location compared to its value in the absence of any scatterers. Traversal time decreases with applied bias and shows distinct dips at resonance. The traversal time through an asymmetric resonant tunneling structure is also investigated. © 1992.

引用

页码：131 / 135

页数：5

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