HIGH-PURITY GASB EPITAXIAL LAYERS GROWN FROM SB-RICH SOLUTIONS

被引：53
作者：
ANAYAMA, C
TANAHASHI, T
KUWATSUKA, H
NISHIYAMA, S
ISOZUMI, S
NAKAJIMA, K
机构：
[1] Fujitsu Laboratories, Atsugi, Atsugi 243-01
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 03期
关键词：
D O I：
10.1063/1.102842
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Undoped GaSb crystals with mirror-like surfaces were obtained by liquid phase epitaxy from Sb-rich solutions. The background carrier concentration strongly depended on the growth temperature. By growing crystals below 600 °C, we can obtain a GaSb crystal with a background carrier concentration under 1016 cm-3. Photoluminescence studies showed that native defects related to Sb vacancies were significantly reduced in the GaSb crystal.
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页码：239 / 240
页数：2
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