INCORPORATION OF ACCELERATED LOW-ENERGY (50-500 EV) IN+ IONS IN SI(100) FILMS DURING GROWTH BY MOLECULAR-BEAM EPITAXY

被引：49

作者：

HASAN, MA

KNALL, J

BARNETT, SA

SUNDGREN, JE

MARKERT, LC

ROCKETT, A

GREENE, JE

机构：

[1] UNIV ILLINOIS,DEPT MAT SCI,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[3] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 01期

关键词：

D O I：

10.1063/1.342565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：172 / 179

页数：8

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