GRIN-SCH SQW LASER PHOTODIODE ARRAY BY IMPROVED MICROCLEAVED FACET PROCESS

被引：13

作者：

NOBUHARA, H

WADA, O

FUJII, T

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 17期

关键词：

D O I：

10.1049/el:19850507

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：718 / 719

页数：2

共 7 条

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[5] LASING CHARACTERISTICS OF IMPROVED GAINASP-INP SURFACE EMITTING INJECTION-LASERS [J].

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[6] AN ALGAAS/GAAS SHORT-CAVITY LASER AND ITS MONOLITHIC INTEGRATION USING MICROCLEAVED FACETS (MCF) PROCESS [J].

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[7]

WADA O, 1984, P IEEE INT ELECTRON, P520

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