STUDY ON IMPURITY DIFFUSION IN THE GLOW-DISCHARGED HYDROGENATED AMORPHOUS-SILICON

被引：20

作者：

MATSUMURA, H ^{[1
]}

MAEDA, M ^{[1
]}

FURUKAWA, S ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT APPL ELECTR,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

关键词：

D O I：

10.1016/0022-3093(83)90634-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：517 / 520

页数：4

共 7 条

[1] CARLSON DE, 1977, RCA REV, V38, P211
[2] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON
CARLSON, DE
MAGEE, CW
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 81 - 83
[3] KUWANO Y, 1979, JPN J APPL PHYS S, P137
[4] STUDY ON IMPURITY DIFFUSION IN GLOW-DISCHARGED AMORPHOUS-SILICON
MATSUMURA, H
MAEDA, M
FURUKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05): : 771 - 774
[5] MATSUMURA H, 1983, J APPL PHYS, V54
[6] NAKAMURA K, 1983, APR ANN M JPN APPL P
[7] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE
SPEAR, WE
LECOMBER, PG
[J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949