QUENCHED-IN LEVELS IN P-TYPE SILICON

被引：74
|
作者：
ELSTNER, L
KAMPRATH, W
机构：
来源：
PHYSICA STATUS SOLIDI | 1967年 / 22卷 / 02期
关键词：
D O I：
10.1002/pssb.19670220227
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：541 / &
相关论文
共 50 条
  • [41] SHALLOW DEFECT LEVELS IN NEUTRON-IRRADIATED P-TYPE EXTRINSIC SILICON
    YOUNG, MH
    MARSH, OJ
    BARON, R
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3755 - 3757
  • [42] SHALLOW DEFECT LEVELS IN NEUTRON-IRRADIATED EXTRINSIC P-TYPE SILICON
    YOUNG, MH
    MARSH, OJ
    BARON, R
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (10): : 1241 - 1242
  • [43] DETERMINATION OF THE ENERGY-LEVELS IN NEUTRON-IRRADIATED P-TYPE SILICON
    GHITA, I
    GRECU, VV
    MESTER, A
    PENESCU, M
    VIISOREANU, G
    REVUE ROUMAINE DE PHYSIQUE, 1981, 26 (01): : 75 - 82
  • [44] Features of manifestation of acceptor state of gold in silicon with quenched-in donors
    A. D. Kiryukhin
    V. V. Grigor’ev
    A. V. Zuev
    V. V. Zuev
    Semiconductors, 2008, 42 : 266 - 271
  • [45] ON QUENCHED-IN RESISTIVITY IN SAP
    FEDERIGH.T
    CERESARA, S
    GUALANDI, D
    ACTA METALLURGICA, 1967, 15 (02): : 399 - &
  • [46] AMORPHOUS SILICON ON P-TYPE CRYSTALLINE SILICON HETEROJUNCTION
    ABOULSEOUD, AK
    MOKHTAR, O
    REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 641 - 644
  • [47] Quenched-in liquid in glass
    Wang, Qing
    Shang, Ying-Hui
    Yang, Yong
    MATERIALS FUTURES, 2023, 2 (01):
  • [48] ANISOTROPY OF CONDUCTIVITY DUE TO WARM HOLES IN P-TYPE GERMANIUM AND P-TYPE SILICON
    ROTH, EP
    TSCHULENA, G
    SEEGER, K
    ZEITSCHRIFT FUR PHYSIK, 1968, 212 (02): : 183 - +
  • [49] QUENCHED-IN RESISTIVITY IN MOLYBDENUM
    SUEZAWA, M
    KIMURA, H
    SCRIPTA METALLURGICA, 1971, 5 (02): : 121 - &
  • [50] QUENCHED-IN VACANCIES IN ALUMINUM
    FURUKAWA, K
    TAKAMURA, J
    KUWANA, N
    TAHARA, R
    ABE, M
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1976, 41 (05) : 1584 - 1592
12345