QUENCHED-IN LEVELS IN P-TYPE SILICON

被引:74
|
作者
ELSTNER, L
KAMPRATH, W
机构
来源
PHYSICA STATUS SOLIDI | 1967年 / 22卷 / 02期
关键词
D O I
10.1002/pssb.19670220227
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:541 / &
相关论文
共 50 条
  • [21] GAMMA IRRADIATION OF SILICON .3. LEVELS IN P-TYPE MATERIAL
    SONDER, E
    TEMPLETO.LC
    JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) : 1811 - +
  • [22] Electrochemical micromachining of p-type silicon
    Allongue, P
    Jiang, P
    Kirchner, V
    Trimmer, AL
    Schuster, R
    JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (38): : 14434 - 14439
  • [23] OPTICAL DISPERSION IN P-TYPE SILICON
    RUSSO, OL
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (12): : 1513 - 1513
  • [24] SOLUBILITY OF GOLD IN P-TYPE SILICON
    DORWARD, RC
    KIRKALDY, JS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (09) : 1284 - &
  • [25] LIFETIME OF ELECTRONS IN P-TYPE SILICON
    BEMSKI, G
    PHYSICAL REVIEW, 1955, 100 (02): : 523 - 524
  • [26] SOLUBILITY OF GOLD IN P-TYPE SILICON
    BROWN, M
    JONES, CL
    WILLOUGHBY, AFW
    SOLID-STATE ELECTRONICS, 1975, 18 (09) : 763 - 770
  • [27] Macropore Formation on p-Type Silicon
    E.A. Ponomarev
    C. Lévy-Clément
    Journal of Porous Materials, 2000, 7 : 51 - 56
  • [28] Study of p-type Porous Silicon
    Naz, Nazir A.
    Jamil, M.
    Ali, Akbar
    PIERS 2014 GUANGZHOU: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM, 2014, : 1979 - 1982
  • [29] ULTRASONIC SPECTROSCOPY IN P-TYPE SILICON
    ZEILE, H
    MATHUNI, O
    LASSMANN, K
    JOURNAL DE PHYSIQUE LETTRES, 1979, 40 (03): : L53 - L55
  • [30] Macropore formation on p-type silicon
    Ponomarev, EA
    Lévy-Clément, C
    JOURNAL OF POROUS MATERIALS, 2000, 7 (1-3) : 51 - 56