QUENCHED-IN LEVELS IN P-TYPE SILICON

被引：74

作者：

ELSTNER, L

KAMPRATH, W

机构：

来源：

PHYSICA STATUS SOLIDI | 1967年 / 22卷 / 02期

关键词：

D O I：

10.1002/pssb.19670220227

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：541 / &

共 16 条

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