QUENCHED-IN LEVELS IN P-TYPE SILICON

被引：74

|

作者：

ELSTNER, L

KAMPRATH, W

机构：

来源：

PHYSICA STATUS SOLIDI | 1967年 / 22卷 / 02期

关键词：

D O I：

10.1002/pssb.19670220227

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：541 / &

相关论文

共 50 条

[1] QUENCHED-IN DEFECTS IN P-TYPE SILICON
BEMSKI, G
DIAS, CA
JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 2983 - +
[2] PROPERTIES OF IRON RELATED QUENCHED-IN LEVELS IN P-SILICON
INDUSEKHAR, H
KUMAR, V
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 95 (01): : 269 - 278
[3] PROPERTIES OF IRON RELATED QUENCHED-IN LEVELS IN P-SILICON.
Indusekhar, H.
Kumar, V.
1600, (95):
[4] RESISTIVITY CHANGES IN QUENCHED P-TYPE SILICON
SHEPHERD, WH
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JAN-F) : 161 - &
[5] ON THE QUENCHED-IN DEFECTS IN N-TYPE SILICON
BALASUBRAMANYAM, N
KUMAR, V
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 100 (01): : 239 - 244
[6] QUENCHED-IN DEEP LEVELS IN BORON-DOPED SILICON
IOANNOU, DE
SOLID STATE COMMUNICATIONS, 1981, 39 (01) : 93 - 94
[7] QUENCHED-IN CENTERS IN SILICON P+N JUNCTIONS
YAU, LD
SAH, CT
SOLID-STATE ELECTRONICS, 1974, 17 (02) : 193 - 201
[8] QUENCHED-IN RECOMBINATION CENTERS IN SILICON
BEMSKI, G
PHYSICAL REVIEW, 1956, 103 (03): : 567 - 569
[9] DEFECT REACTIONS IN COPPER-DIFFUSED AND QUENCHED P-TYPE SILICON
MESLI, A
HEISER, T
PHYSICAL REVIEW B, 1992, 45 (20): : 11632 - 11641
[10] INTERACTION OF RADIATION AND QUENCHED-IN DEFECTS IN SILICON
MAKARENKO, LF
MARKEVICH, VP
MURIN, LI
TKACHEV, VD
DOKLADY AKADEMII NAUK BELARUSI, 1981, 25 (11): : 988 - 990

← 1 2 3 4 5 →