MAGNETIC AND ELECTRONIC-PROPERTIES IN HOLE-DOPED MANGANESE OXIDES WITH LAYERED STRUCTURES - LA1-XSR1+XMNO4

被引：361

作者：

MORITOMO, Y ^{[1
]}

TOMIOKA, Y ^{[1
]}

ASAMITSU, A ^{[1
]}

TOKURA, Y ^{[1
]}

MATSUI, Y ^{[1
]}

机构：

[1] NATL INST RES INORGAN MAT, TSUKUBA, IBARAKI 305, JAPAN

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.51.3297

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical resistivity () and magnetic susceptibility () were measured for single crystals of La1-xSr1+xMnO4 (0.0x0.7), which were grown by the floating-zone method with varying the nominal hole concentration (x). With hole doping, critical temperature (TN) for the antiferromagnetic phase transition decreases and eventually a spin-glass phase appears for x0.2, perhaps due to the competition between the generic antiferromagnetic superexchange interaction and the ferromagnetic double-exchange interaction. At x1/2, real-space ordering of the doped holes occurs at 220 K, accompanying a steep increase of as well as a suppression of . © 1995 The American Physical Society.

引用

页码：3297 / 3300

页数：4

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