MODULATED BLUE-SHIFT OF THE QUANTUM-WELL ELECTROLUMINESCENCE IN A GAAS/ALAS SUPERLATTICE RESONANT-TUNNELING DEVICE

被引:4
作者
KUHN, O
MAUDE, DK
PORTAL, JC
HENINI, M
EAVES, L
HILL, G
PATE, M
机构
[1] INSA, CNRS, F-31077 TOULOUSE, FRANCE
[2] UNIV SHEFFIELD, DEPT ELECTR & ELECT ENGN, SHEFFIELD S1 4DU, ENGLAND
[3] UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM NG7 2RD, ENGLAND
关键词
D O I
10.1016/0038-1101(94)90310-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electrical transport and electroluminescence measurements have been performed on a p-i-n superlattice resonant tunneling device with a narrow 3.1 nm quantum well in the centre. The electroluminescence observed from the centre quantum well blue shifts with increasing electric field. The application of a magnetic field perpendicular to the layer modulates the blue shift of the quantum well recombination. Possible physical origins for the blue shift are discussed.
引用
收藏
页码:843 / 846
页数:4
相关论文
共 18 条
[1]   VARIATIONAL CALCULATIONS ON A QUANTUM WELL IN AN ELECTRIC-FIELD [J].
BASTARD, G ;
MENDEZ, EE ;
CHANG, LL ;
ESAKI, L .
PHYSICAL REVIEW B, 1983, 28 (06) :3241-3245
[2]   ELECTRIC-FIELD-INDUCED DISSOCIATION OF EXCITONS IN SEMICONDUCTOR QUANTUM WELLS [J].
BRUMJA ;
BASTARD, G .
PHYSICAL REVIEW B, 1985, 31 (06) :3893-3898
[3]   TUNNELING BETWEEN 2 STRONGLY COUPLED SUPERLATTICES [J].
DAVIES, RA ;
KELLY, MJ ;
KERR, TM .
PHYSICAL REVIEW LETTERS, 1985, 55 (10) :1114-1116
[4]   ENERGY-LEVELS OF WANNIER EXCITONS IN GAAS-GA1-XALXAS QUANTUM-WELL STRUCTURES [J].
GREENE, RL ;
BAJAJ, KK ;
PHELPS, DE .
PHYSICAL REVIEW B, 1984, 29 (04) :1807-1812
[5]  
HARRISON PA, 1993, IN PRESS SURF SCI
[6]   LASER SPECTROSCOPY OF SEMICONDUCTORS AT LOW-TEMPERATURES AND HIGH MAGNETIC-FIELDS [J].
HEIMAN, D .
SPECTROSCOPY OF SEMICONDUCTORS, 1992, 36 :1-83
[7]   A NEW MATRIX-METHOD FOR TUNNELLING IN HETEROSTRUCTURES - GAMMA, X EFFECTS IN SINGLE-BARRIER SYSTEMS [J].
KO, DYK ;
INKSON, JC .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (08) :791-796
[8]   RESONANT MAGNETOTUNNELING OF ELECTRONS AND HOLES IN A P-I-N-DIODE DEVICE INCORPORATING A DOUBLE BARRIER STRUCTURE [J].
MARTIN, PM ;
HAYDEN, RK ;
WHITE, CRH ;
HENINI, M ;
EAVES, L ;
MAUDE, DK ;
PORTAL, JC ;
HILL, G ;
PATE, MA .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) :B456-B459
[9]   TUNNELING THROUGH INDIRECT-GAP SEMICONDUCTOR BARRIERS [J].
MENDEZ, EE ;
CALLEJA, E ;
WANG, WI .
PHYSICAL REVIEW B, 1986, 34 (08) :6026-6029
[10]   EFFECT OF AN ELECTRIC-FIELD ON THE LUMINESCENCE OF GAAS QUANTUM WELLS [J].
MENDEZ, EE ;
BASTARD, G ;
CHANG, LL ;
ESAKI, L ;
MORKOC, H ;
FISCHER, R .
PHYSICAL REVIEW B, 1982, 26 (12) :7101-7104