PLANAR INP-INGAAS SINGLE-GROWTH AVALANCHE PHOTODIODES WITH NO GUARD RINGS

被引：21

作者：

TAROF, LE ^{[1
]}

BRUCE, R ^{[1
]}

KNIGHT, DG ^{[1
]}

YU, J ^{[1
]}

KIM, HB ^{[1
]}

BAIRD, T ^{[1
]}

机构：

[1] NO TELECOM CANADA LTD,OTTAWA,ON K1Y 4H7,CANADA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 11期

关键词：

D O I：

10.1109/68.473488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel single-growth planar avalanche photodiode (APD) structure without guard rings is described. InP-InGaAs separate absorption, charge sheet, grading, and multiplication (SAGCM) APD's have been fabricated using the new edge break-doun suppression method. A very low, dark current of 0.6 nA at 0.98 of the breakdown voltage (BV) was measured for a 30-mu m-diameter device, The maximum -3-dB electrical bandwidth was 6.1 GHz, and in the absence of obvious inductive peaking.

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收藏

页码：1330 / 1332

页数：3

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