UNIVERSAL RELATIONSHIP BETWEEN RESONANT-FREQUENCY AND DAMPING RATE OF 1.3 MU-M INGAASP SEMICONDUCTOR-LASERS

被引：26
作者：
OLSHANSKY, R
HILL, P
LANZISERA, V
POWAZINIK, W
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 11期
关键词：
D O I：
10.1063/1.98110
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：653 / 655
页数：3
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