EVIDENCE OF THE ROLE OF DEFECTS NEAR THE INJECTING INTERFACE IN DETERMINING SIO2 BREAKDOWN

被引：13

作者：

OLIVO, P

RICCO, B

NGUYEN, TN

KUAN, TS

JENG, SJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 26期

关键词：

D O I：

10.1063/1.98925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2245 / 2247

页数：3

共 11 条

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[4]

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[5] ELECTRON TRAPPING DETRAPPING WITHIN THIN SIO2-FILMS IN THE HIGH-FIELD TUNNELING REGIME [J].

OLIVO, P ;

RICCO, B ;

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[6] HIGH-FIELD-INDUCED VOLTAGE-DEPENDENT OXIDE CHARGE [J].

OLIVO, P ;

RICCO, B ;

SANGIORGI, E .

APPLIED PHYSICS LETTERS, 1986, 48 (17) :1135-1137

[7] NOVEL MECHANISM FOR TUNNELING AND BREAKDOWN OF THIN SIO2-FILMS [J].

RICCO, B ;

AZBEL, MY ;

BRODSKY, MH .

PHYSICAL REVIEW LETTERS, 1983, 51 (19) :1795-1798

[8] HIGH-FIELD ELECTRON TRAPPING IN SIO2 [J].

SOLOMON, P .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3843-3849

[9]

SOLOMON PM, 1977, APPL PHYS LETT, V31, P251

[10]

van der Schoot J. J., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P270

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