0.2 MICRON LENGTH T-SHAPED GATE FABRICATION USING ANGLE EVAPORATION

被引：13

作者：

CHAO, PC

KU, WH

SMITH, PM

PERKINS, WH

机构：

[1] NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

[2] GE,ELECTR LAB,SYRACUSE,NY 13221

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 04期

关键词：

D O I：

10.1109/EDL.1983.25671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：122 / 124

页数：3

共 13 条

[1]

BANDY S, 1981, ONR3 VAR ASS INC ANN

[2]

Chao P. C., 1981, International Electron Devices Meeting, P92

[3] STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1037-1045

[4] EXTREMELY LOW-NOISE MESFETS FABRICATED BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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KAWASAKI, H ;

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NAKANISI, T ;

KAWABUCHI, K ;

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ELECTRONICS LETTERS, 1981, 17 (13) :450-451

[5]

LADD GO, 1980, DELETTR7726962 HUGH

[6] SUBMICROMETER LIFT-OFF LINE WITH T-SHAPED CROSS-SECTIONAL FORM [J].

MATSUMURA, M ;

TSUTSUI, K ;

NARUKE, Y .

ELECTRONICS LETTERS, 1981, 17 (12) :429-430

[7] TUNGSTEN-GOLD GATE GAAS MICROWAVE FET [J].

MORKOC, H ;

ANDREWS, J ;

SANKARAN, R ;

DULLY, JH .

ELECTRONICS LETTERS, 1978, 14 (16) :514-515

[8] SUPER LOW-NOISE GAAS-MESFETS WITH A DEEP-RECESS STRUCTURE [J].

OHATA, K ;

ITOH, H ;

HASEGAWA, F ;

FUJIKI, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1029-1034

[9]

OMORI M, 1980, Patent No. 4213840

[10] SUBMICROMETER GATE FABRICATION OF GAAS MESFET BY PLASMA ETCHING [J].

TAKAHASHI, S ;

MURAI, F ;

KODERA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) :1213-1218

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