EQUALITY OF TEMPERATURE DEPENDENCE OF GOLD-SILICON SURFACE BARRIER + SILICON ENERGY GAP IN AU N-TYPE SI DIODES ( PHOTOEMISSION THRESHOLD ANALYSIS 100-370 DEGREES K E )

被引：58

作者：

CROWELL, CR

SZE, SM

SPITZER, WG

机构：

来源：

关键词：

D O I：

10.1063/1.1753976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：91 / &

共 6 条

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[4]

MCLEAN TP, 1960, PROGR SEMICOND, V5, P53

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[6]

SZE SM, TO BE PUBLISHED