PHOTOREFLECTANCE CHARACTERIZATION OF GRADED INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR LAYERS

被引：4
作者：
CHEN, KL
LIN, HH
JAN, GJ
CHEN, YH
TSENG, PK
机构：
[1] NATL TAIWAN UNIV,DEPT PHYS,TAIPEI 10764,TAIWAN
[2] NATL TAIWAN UNIV,DEPT PHYS,TAIPEI 10764,TAIWAN
[3] NATL TAIWAN UNIV,DEPT ELECTROOPT ENGN,TAIPEI 10764,TAIWAN
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 20期
关键词：
D O I：
10.1063/1.113492
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The photoreflectance (PR) spectroscopic technique has been used to investigate the microstructures of the graded InAlAs/InGaAs heterojunction bipolar transistor at room temperature. The energy features of the PR spectrum were fitted and identified as band-to-band transitions in the graded layers which were grown using pulsed molecular beam epitaxy and InGaAs as well as InAlAs layers. A linear variation relationship of band gaps with Al composition z was observed and approximated by Eg=0.737+0.759z eV. From the observed Franz-Keldysh oscillations, we have evaluated the built-in dc electric fields in the i-InGaAs collector and n-InAlAs emitter regions. These electric fields are in good agreement with the continuity condition of electric displacements in the interfaces.© 1995 American Institute of Physics.
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收藏
页码：2697 / 2699
页数：3
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