EXCITON-STATES IN GAAS/ALGAAS BRAGG CONFINING STRUCTURES STUDIED BY RESONANT RAMAN-SCATTERING

被引:0
作者
ZAHLER, M [1 ]
COHEN, E [1 ]
SALZMAN, J [1 ]
LINDER, E [1 ]
PFEIFFER, LN [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源
JOURNAL DE PHYSIQUE IV | 1993年 / 3卷 / C5期
关键词
D O I
10.1051/jp4:1993571
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on the study of the low temperature resonant Raman scattering (RRS) in GaAs/Al0.32Ga0.6sAs Bragg confining structures (BCS). The LO-phonon RRS is observed in the spectral range of the (e(B) : hh(B)) and (C(B) : lh(B)) Bragg confined excitons. The RRS profiles show an outgoing beam resonance that is much stronger than the incoming beam resonance. These profiles are analyzed by a model in which the exciton dimensionality affects the in-plane excitonic dispersion and the Frohlich interaction dependence on the phonon wavevector. The exciton scattering, in its translational motion, is assumed to be due to heavy point defects (short range potential fluctuations). Detailed calculations of the RRS profiles result in excellent agreement with the observed spectra. From them we conclude that the Bragg confined (e(B) : hh(B)) exciton is approximately 2-dimensional.
引用
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页码:343 / 346
页数:4
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