INFLUENCE OF THE BAF2 SUBSTRATE PREPARATION ON THE STRUCTURAL PERFECTION OF EPITAXIALLY GROWN IV-VI COMPOUNDS

被引：2

作者：

CLEMENS, H ^{[1
]}

VOITICEK, A ^{[1
]}

HOLZINGER, A ^{[1
]}

BAUER, G ^{[1
]}

BOTTNER, H ^{[1
]}

机构：

[1] FRAUNHOFER INST PHYS MESSTECH,W-7800 FREIBURG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 102卷 / 04期

关键词：

D O I：

10.1016/0022-0248(90)90863-G

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of preheating time and temperature of (111) oriented BaF2 substrates on the crystalline epitaxial perfection of IV-VI film growth is investigated by in situ reflection high energy electron diffraction, and after growth, by X-ray diffraction and electron channelling patterns. A preheating temperature of 500°C for 10 min yields excellent epitaxial film relation ship and perfect overgrowth. © 1990.

引用

页码：933 / 938

页数：6

共 8 条

[1] GROWTH AND CHARACTERIZATION OF PBTE EPITAXIAL-FILMS GROWN BY HOT-WALL EPITAXY [J].