OBSERVATION OF STRONG LOCALIZATION EFFECTS IN (ALGA)AS-GAAS TWO-DIMENSIONAL ELECTRON-GAS STRUCTURES AT LOW MAGNETIC-FIELDS

被引：38
作者：
FOXON, CT
HARRIS, JJ
WHEELER, RG
LACKLISON, DE
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期
关键词：
D O I：
10.1116/1.583411
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：511 / 514
页数：4
相关论文
共 10 条
[1]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[2]   IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J].
HIYAMIZU, S ;
SAITO, J ;
NANBU, K ;
ISHIKAWA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L609-L611
[3]   TRANSPORT-PROPERTIES OF SELECTIVELY DOPED GAAS-(ALGA)AS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].
HWANG, JCM ;
KASTALSKY, A ;
STORMER, HL ;
KERAMIDAS, VG .
APPLIED PHYSICS LETTERS, 1984, 44 (08) :802-804
[4]   LOW FIELD MOBILITY OF 2-D ELECTRON-GAS IN MODULATION DOPED ALXGA1-XAS/GAAS LAYERS [J].
LEE, K ;
SHUR, MS ;
DRUMMOND, TJ ;
MORKOC, H .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6432-6438
[5]   PREPARATION OF CARBON-FREE GAAS-SURFACES - AES AND RHEED ANALYSIS [J].
MUNOZYAGUE, A ;
PIQUERAS, J ;
FABRE, N .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) :149-153
[6]   DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].
NEAVE, JH ;
JOYCE, BA ;
DOBSON, PJ ;
NORTON, N .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8
[7]   ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS [J].
STILLMAN, GE ;
WOLFE, CM .
THIN SOLID FILMS, 1976, 31 (1-2) :69-88
[8]  
TAKEDA Y, 1982, ELECTRON LETT, V18, P310
[9]   ELECTRON-MOBILITY IN MODULATION-DOPED HETEROSTRUCTURES [J].
WALUKIEWICZ, W ;
RUDA, HE ;
LAGOWSKI, J ;
GATOS, HC .
PHYSICAL REVIEW B, 1984, 30 (08) :4571-4582
[10]   MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSPORT-PROPERTIES OF MODULATION-DOPED ALGAAS-GAAS HETEROSTRUCTURES [J].
WEIMANN, G ;
SCHLAPP, W .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :411-413
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