PHOTOLUMINESCENCE OF SEMICONDUCTING EPITAXIAL-FILMS OF PB-1-XSN-X TE AND PB-1-XSN-X SE

被引：0

作者：

GUREEV, DM ^{[1
]}

DAVARASHVILI, OI ^{[1
]}

ZASAVITSKII, II ^{[1
]}

MATSONASHVILI, BN ^{[1
]}

SHOTOV, AP ^{[1
]}

机构：

[1] PN LEBEDEV PHYS INST,MOSCOW,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1251 / 1255

页数：5

共 12 条

[1] ADAMS MJ, 1969, GALLIUM ARSENIDE LAS, P5
[2] SPONTANEOUS AND LASER EMISSION FROM PB1-XSNXTE DIODES PREPARED BY SB DIFFUSION
ANTCLIFFE, GA
WROBEL, JS
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (07) : 290 - +
[3] CHARACTERISTICS OF TUNABLE PB1-XSNX TE JUNCTION LASERS IN 8-12-MU-M REGION
ANTCLIFFE, GA
PARKER, SG
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4145 - 4160
[4] Calawa A. R., 1973, Journal of Luminescence, V7, P477, DOI 10.1016/0022-2313(73)90080-X
[5] BAND STRUCTURE AND LASER ACTION IN PBXSN1-XTE
DIMMOCK, JO
MELNGAIL.I
STRAUSS, AJ
[J]. PHYSICAL REVIEW LETTERS, 1966, 16 (26) : 1193 - &
[6] INJECTION LUMINESCENCE AND LASER ACTION IN EPITAXIAL PBTE DIODES
HOLLOWAY, H
YEUNG, KF
VARGA, AJ
WEBER, WH
LOGOTHETIS, EM
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (01) : 5 - +
[7] Kurbatov L. N., 1972, Soviet Journal of Quantum Electronics, V2, P281, DOI 10.1070/QE1972v002n03ABEH004442
[8] MELNGAILIS I, 1973, 4TH P C JAP SOC APPL, P3
[9] Melngailis I., 1970, SEMICOND SEMIMETALS, V5, P111, DOI [10.1016/S0080-8784(08)62815-X, DOI 10.1016/S0080-8784(08)62815-X]
[10] SHOTOV AP, 1973, 4TH P C JAP SOC APPL, P282