MORPHOLOGICAL FLUCTUATION AND ELECTRICAL-PROPERTIES OF SPUTTERED HYDROGENATED SILICON

被引：15
作者：
SHIRAFUJI, J
MATSUI, H
NARUKAWA, A
INUISHI, Y
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 06期
关键词：
D O I：
10.1063/1.93580
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：535 / 537
页数：3
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