144-DEGREES-C OPERATION OF 1.3 MU-M INGAASP VERTICAL CAVITY LASERS ON GAAS SUBSTRATES

被引：46

作者：

DUDLEY, JJ

ISHIKAWA, M

BABIC, DI

MILLER, BI

MIRIN, R

JIANG, WB

BOWERS, JE

HU, EL

机构：

[1] Electrical and Computer Engineering Department, University of California, Santa Barbara

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 26期

关键词：

D O I：

10.1063/1.107972

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report lasing at temperatures as high as 144-degrees-C in long-wavelength InGaAsP vertical cavity lasers. The devices are optically pumped and employ a novel cavity design using GaAs/AlAs quarter-wavelength stacks for one mirror. The characteristic temperature T0 of the device increases from 42 K at room temperature to 81 K at temperatures above 80-degrees-C as the gain peak moves into resonance with the longer wavelength cavity mode.

引用

收藏

页码：3095 / 3097

页数：3

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