PROPERTIES OF P-GAAS SAWTOOTH DOPING SUPERLATTICE N+-GAAS STRUCTURE PREPARED BY MOLECULAR-BEAM EPITAXY

被引：0
作者：
SUN, CY
LIU, WC
机构：
[1] Department of Electrical Engineering, National Cheng-Kung University, Tainan
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 22期
关键词：
D O I：
10.1063/1.105871
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The transport properties of a p-GaAs/sawtooth doping superlattice (SDS)/n+-GaAs structure has been studied. It is known that the transport properties vary with temperature. Experimentally, a diode-like performance is obtained, due to the thermionic emission, at room temperature. However, a quite different S-shaped negative-differential-resistance (NDR) phenomenon, resulting primarily from the avalanche multiplication in the SDS region, is observed at 77 K. The existence of different performance modes, i.e., diode and switch, on the same wafer chip provides more flexibility for device and circuit applications.
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页码：2823 / 2825
页数：3
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