ANISOTROPIC VACANCY KINETICS AND SINGLE-DOMAIN STABILIZATION ON SI(100)-2X1

被引：90

作者：

BEDROSSIAN, P ^{[1
]}

KLITSNER, T ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.68.646

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Preferential annihilation of mobile surface vacancies at the ends, rather than the sides of dimer rows leads to a new, nonequilibrium, single-domain phase of Si(100) that is not accessible by epitaxial growth but is stable at moderate temperatures (T approximately 450-degrees-C). These results emerge from a tunneling microscope study of layer-by-layer removal of Si from Si(100) under 225-eV Xe-ion bombardment.

引用

收藏

页码：646 / 649

页数：4

相关论文

共 21 条

[1]

ALERHAND O, 1990, PHYS REV LETT, V64, P2401

[2] SURFACE RECONSTRUCTION IN LAYER-BY-LAYER SPUTTERING OF SI(111) [J].

BEDROSSIAN, P ;

KLITSNER, T .

PHYSICAL REVIEW B, 1991, 44 (24) :13783-13786

[3] LAYER-BY-LAYER SPUTTERING AND EPITAXY OF SI(100) [J].

BEDROSSIAN, P ;

HOUSTON, JE ;

TSAO, JY ;

CHASON, E ;

PICRAUX, ST .

PHYSICAL REVIEW LETTERS, 1991, 67 (01) :124-127

[4] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1691-1694

[5] SURFACE ROUGHENING OF GE(001) DURING 200EV XE-ION BOMBARDMENT AND GE MOLECULAR-BEAM EPITAXY [J].

CHASON, E ;

TSAO, JY ;

HORN, KM ;

PICRAUX, ST ;

ATWATER, HA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :2507-2511

[6]

Greene J.E., 1989, ION BEAM ASSISTED FI, P101

[7] NUCLEATION AND GROWTH OF EPITAXIAL SILICON ON SI(001) AND SI(111) SURFACES BY SCANNING TUNNELING MICROSCOPY [J].

HAMERS, RJ ;

KOHLER, UK ;

DEMUTH, JE .

ULTRAMICROSCOPY, 1989, 31 (01) :10-19

[8] STRUCTURAL AND ELECTRONIC PROPERTIES OF STEPPED SEMICONDUCTOR SURFACES [J].

HENZLER, M ;

CLABES, J .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, :389-396

[9] SCANNING-TUNNELING-MICROSCOPY STUDY OF SINGLE-DOMAIN SI(001) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

HOEVEN, AJ ;

LENSSINCK, JM ;

DIJKKAMP, D ;

VANLOENEN, EJ ;

DIELEMAN, J .

PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1830-1832

[10]

ISHIZAKA A, 1982, 2ND P INT S MOL BEAM, P182