ORIGIN OF THE OSCILLATION IN CURRENT-VOLTAGE CHARACTERISTICS OF GAAS-ALGAAS TUNNEL-JUNCTIONS

被引：15
作者：
IHM, J
机构：
来源：
PHYSICAL REVIEW LETTERS | 1985年 / 55卷 / 09期
关键词：
D O I：
10.1103/PhysRevLett.55.999
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：999 / 1002
页数：4
相关论文
共 16 条
[11]   OSCILLATORY TUNNEL CONDUCTANCE INDUCED BY LONGITUDINAL OPTIC PHONONS IN INSB-OXIDE-METAL STRUCTURE [J].
KATAYAMA, Y ;
KOMATSUBARA, KF .
PHYSICAL REVIEW LETTERS, 1967, 19 (25) :1421-+
[12]   POINT-CONTACT SPECTROSCOPY OF ELECTRON RELAXATION MECHANISMS IN SEMICONDUCTORS [J].
KULIK, IO ;
SHEKHTER, RI .
PHYSICS LETTERS A, 1983, 98 (03) :132-134
[13]   ORIGIN OF THE CURRENT OSCILLATIONS IN GAAS-ALGAAS TUNNEL-JUNCTIONS [J].
LEBURTON, JP .
PHYSICAL REVIEW B, 1985, 31 (06) :4080-4082
[14]   OPTICAL-PHONON EMISSION IN BALLISTIC TRANSPORT THROUGH MICROCHANNELS OF INGAAS [J].
LU, PF ;
TSUI, DC ;
COX, HM .
PHYSICAL REVIEW LETTERS, 1985, 54 (14) :1563-1566
[15]  
SCHRIEFFER JR, 1964, THEORY SUPERCONDUCTI, P78
[16]  
Wolf E.L., 1982, TUNNELING SPECTROSCO, P71
12