IMPURITY THERMOREFLECTION OF GALLIUM-ARSENIDE

被引:0
作者
REZNICHENKO, MF [1 ]
SALMAN, EG [1 ]
VERTOPRAKHOV, VN [1 ]
机构
[1] ACAD SCI USSR,INORG CHEM INST,NOVOSIBIRSK,USSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 8卷 / 06期
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D O I
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中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:741 / 743
页数:3
相关论文
共 27 条
[1]   REFLECTANCE MODULATION AT A GERMANIUM SURFACE [J].
BATZ, B .
SOLID STATE COMMUNICATIONS, 1966, 4 (05) :241-&
[2]   BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].
BLANC, J ;
WEISBERG, LR ;
BUBE, RH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :225-&
[4]   ELECTROABSORPTION BY SUBSTITUTIONAL COPPER IMPURITIES IN GAAS [J].
BURGIEL, JC ;
BRAUN, HJ .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) :2583-&
[5]  
CARDONA M, 1969, OPTICAL MODULATI S11
[6]  
Cowell T. A. T., 1967, J APPL PHYS, V18, P1045
[7]  
FRIDKIN VM, 1961, PHOTOELECTRETS ELECT
[8]   THE ELECTRON TRAP MECHANISM OF LUMINESCENCE IN SULPHIDE AND SILICATE PHOSPHORS [J].
GARLICK, GFJ ;
GIBSON, AF .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1948, 60 (342) :574-590
[9]  
JONATH AD, 1972, B AM PHYS SOC, V17, P27
[10]   LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J].
KRESSEL, H ;
DUNSE, JU ;
NELSON, H ;
HAWRYLO, FZ .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :2006-&