JOSEPHSON TUNNELING THROUGH LOCALLY THINNED SILICON WAFERS

被引：38

作者：

HUANG, CL

VANDUZER, T

机构：

[1] UNIV CALIF,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

[2] UNIV CALIF,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 12期

关键词：

D O I：

10.1063/1.1655388

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：753 / 756

页数：4

共 12 条

[1]

ADAMS AC, 1970, ELECTROCHEM SOC EXTE, P343

[2] TUNNELING BETWEEN SUPERCONDUCTORS [J].

AMBEGAOKAR, V ;

BARATOFF, A .

PHYSICAL REVIEW LETTERS, 1963, 10 (11) :486-&

[3] ETHYLENE DIAMINE-PYROCATECHOL-WATER MIXTURE SHOWS ETCHING ANOMALY IN BORON-DOPED SILICON [J].

BOHG, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :401-&

[4]

BUSEN KM, 1968, ELECTROCHEM TECH, V6, P257

[5] USE OF LOW BARRIER POTENTIAL MATERIALS TO IMPROVE HIGH-FREQUENCY COUPLING TO JOSEPHSON TUNNEL-JUNCTIONS [J].

CARDINNE, P ;

NORDMAN, J ;

RENARD, M .

REVUE DE PHYSIQUE APPLIQUEE, 1974, 9 (01) :167-171

[6] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON [J].

FINNE, RM ;

KLEIN, DL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) :965-&

[7]

GIAVER I, 1969, J VAC SCI TECHNOL, V6, P502

[8] TUNNELING AND WEAK-LINK SUPERCONDUCTOR PHENOMENA HAVING POTENTIAL DEVICE APPLICATIONS [J].

MCCUMBER, DE .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) :2503-&

[9] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J].

MEAD, CA ;

SPITZER, WG .

PHYSICAL REVIEW, 1964, 134 (3A) :A713-+

[10]

SETO J, 1974, 13 P INT C LOW TEMP

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