DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100)

被引：158

作者：

FISCHER, R ^{[1
]}

NEUMAN, D ^{[1
]}

ZABEL, H ^{[1
]}

MORKOC, H ^{[1
]}

CHOI, C ^{[1
]}

OTSUKA, N ^{[1
]}

机构：

[1] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 18期

关键词：

D O I：

10.1063/1.96988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1223 / 1225

页数：3

共 12 条

[1] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J].

FISCHER, R ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

KOPP, W ;

MORKOC, H ;

LITTON, CW .

ELECTRONICS LETTERS, 1984, 20 (22) :945-947

[2] GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].

FISCHER, R ;

MASSELINK, WT ;

KLEM, J ;

HENDERSON, T ;

MCGLINN, TC ;

KLEIN, MV ;

MORKOC, H ;

MAZUR, JH ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :374-381

[3] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

FISCHER, R ;

CHAND, N ;

KOPP, W ;

MORKOC, H ;

ERICKSON, LP ;

YOUNGMAN, R .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :397-399

[4]

FISCHER R, UNPUB

[5] A DC AND MICROWAVE COMPARISON OF GAAS-MESFETS ON GAAS AND SI SUBSTRATES [J].

FISCHER, RJ ;

CHAND, N ;

KOPP, WF ;

PENG, CK ;

MORKOC, H ;

GLEASON, KR ;

SCHEITLIN, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) :206-213

[6] DEFECTS IN EPITAXIAL MULTILAYERS .2. DISLOCATION PILE-UPS, THREADING DISLOCATIONS, SLIP LINES AND CRACKS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1975, 29 (03) :273-280

[7] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

METZE, GM ;

CHOI, HK ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1107-1109

[8]

NEUMANN DA, 6TH MBE WORKSH

[9]

NEUMANN DA, UNPUB J VAC SCI TE B

[10] FABRICATION OF GAAS-MESFET RING OSCILLATOR ON MOCVD GROWN GAAS/SI(100) SUBSTRATE [J].

NONAKA, T ;

AKIYAMA, M ;

KAWARADA, Y ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (12) :L919-L921

← 1 2 →