THE CHEMICAL VAPOR-DEPOSITION OF SIO2 FROM TEOS

被引：25

作者：

CROWELL, JE ^{[1
]}

TEDDER, LL ^{[1
]}

CHO, HC ^{[1
]}

CASCARANO, FM ^{[1
]}

LOGAN, MA ^{[1
]}

机构：

[1] LAM RES CORP,ADV RES CTR,SAN DIEGO,CA 92126

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1990年 / 54卷

关键词：

D O I：

10.1016/0368-2048(90)80299-P

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The dissociative adsorption and thermal decomposition of tetraethoxysilane, TEOS, has been studied on Si(100) and SiO2. TEOS reacts with either surface at elevated temperatures to produce a mixture of di- and triethoxysiloxanes. These intermediates decompose in vacuum to evolve ethylene and deposit SiO2. Strong similarities are evident in the decomposition of TEOS on both surfaces.

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页码：1097 / 1104

页数：8

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