LIQUID JUNCTIONS FOR CHARACTERIZATION OF ELECTRONIC MATERIALS .5. COMPARISON WITH SOLID-STATE DEVICES USED TO CHARACTERIZE REACTIVE ION ETCHING OF SI

被引：0

作者：

FANTINI, MCA ^{[1
]}

SHEN, WM ^{[1
]}

TOMKIEWICZ, M ^{[1
]}

GAMBINO, JP ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 10期

关键词：

D O I：

10.1063/1.343801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4846 / 4853

页数：8

共 19 条

[1] LIQUID JUNCTIONS FOR CHARACTERIZATION OF ELECTRONIC MATERIALS .1. THE POTENTIAL DISTRIBUTION AT THE SI METHANOL INTERFACE
FANTINI, MCA
SHEN, WM
TOMKIEWICZ, M
GAMBINO, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) : 4884 - 4890
[2] LIQUID JUNCTIONS FOR CHARACTERIZATION OF ELECTRONIC MATERIALS .4. IMPEDANCE SPECTROSCOPY OF REACTIVE ION-ETCHED SI
FANTINI, MCA
SHEN, WM
TOMKIEWICZ, M
GAMBINO, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (05) : 2148 - 2155
[3] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
GOODMAN, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &
[4] SI-SIO2 INTERFACE STRUCTURES ON SI(100), (111), AND (110) SURFACES
HATTORI, T
SUZUKI, T
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 470 - 472
[5] STUDIES OF SIO2 AND SI-SIO2 INTERFACES BY XPS
HATTORI, T
NISHINA, T
[J]. SURFACE SCIENCE, 1979, 86 (JUL) : 555 - 561
[6] HATTORI T, 1988, 20TH 1988 INT C SOL
[7] CHARACTERIZATION OF REACTIVE ION ETCHED SILICON SURFACE BY DEEP LEVEL TRANSIENT SPECTROSCOPY
MATSUMOTO, H
SUGANO, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2823 - 2828
[8] A STUDY OF CCIF3/H2 REACTIVE ION ETCHING DAMAGE AND CONTAMINATION EFFECTS IN SILICON
MU, XC
FONASH, SJ
OEHRLEIN, GS
CHAKRAVARTI, SN
PARKS, C
KELLER, J
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2958 - 2967
[9] COMPARISON OF THE DAMAGE AND CONTAMINATION PRODUCED BY CF4 AND CF4/H2 REACTIVE ION ETCHING - THE ROLE OF HYDROGEN
MU, XC
FONASH, SJ
ROHATGI, A
RIEGER, J
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (17) : 1147 - 1149
[10] REACTIVE-ION ETCHING
OEHRLEIN, GS
[J]. PHYSICS TODAY, 1986, 39 (10) : 26 - 33

← 1 2 →