ELECTRON-CAPTURE AT THE 2 ACCEPTOR LEVELS OF A ZINC CENTER IN SILICON

被引：29

作者：

WANG, AC ^{[1
]}

LU, LS ^{[1
]}

SAH, CT ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.30.5896

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5896 / 5903

页数：8

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