TRANSPORT OF NONEQUILIBRIUM CARRIERS IN A VARIABLE-GAP SEMICONDUCTOR UNDER IMPURITY RADIATIVE RECOMBINATION CONDITIONS

被引:0
作者
VOLKOV, AS
LIPKO, AL
MERETLIEV, S
SHLENSKII, AA
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1984年 / 18卷 / 03期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:292 / 294
页数:3
相关论文
共 10 条
[1]  
BELKOV VV, 1981, ALL UNION C PHYSICS, P192
[2]   CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].
CASEY, HC ;
SELL, DD ;
WECHT, KW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257
[3]  
Levanyuk A. P., 1981, Soviet Physics - Uspekhi, V24, P187, DOI 10.1070/PU1981v024n03ABEH004770
[4]   OPTICAL-ABSORPTION AND PHOTOLUMINESCENCE STUDIES OF THIN GAAS LAYERS IN GAAS-AL CHI GA1-CHI AS DOUBLE HETEROSTRUCTURES [J].
SELL, DD ;
CASEY, HC .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :800-807
[5]  
TSARENKOV GV, 1979, SOV PHYS SEMICOND+, V13, P641
[6]  
TSARENKOV GV, 1982, SOV PHYS SEMICOND+, V16, P1218
[7]  
TSARENKOV GV, 1982, SOV PHYS SEMICOND+, V16, P284
[8]  
Volkov A. S., 1979, Soviet Technical Physics Letters, V5, P269
[9]  
VOLKOV AS, 1977, SOV PHYS SEMICOND+, V11, P1004
[10]  
VOLKOV AS, 1982, SOV PHYS SEMICOND+, V16, P262