OPTICAL-PROPERTIES OF THE MIXED-VALENT TMSE

被引：0
|
作者：
KIKOIN, KA [1 ]
NIZHNIKOVA, GP [1 ]
FARBEROVICH, OV [1 ]
机构：
[1] VORONEZH STATE UNIV,FAC PHYS,VORONEZH 394693,USSR
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 159卷 / 02期
关键词：
D O I：
10.1002/pssb.2221590221
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The optical density of states (ODOS) of the mixed‐valent semiconductor TmSe is considered as the superposition of the interband ODOS for the selfconsistent band spectrum of TmSe calculated by the linear augmented plane wave method in the scalar relativistic approximation, and the interconfigurational DOS arising due to the excitation of the Tm f‐shell. This approach is based on the general description of the mixed‐valence semiconductor as an excitonic dielectric. The results of the calculations are compared with the experimental reflectivity spectrum of TmSe. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA
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页码：743 / 753
页数：11
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