SIO2 DAMAGE DURING ELECTRON-BEAM ANNEALING

被引：0
|
作者：
POLLARD, CF [1 ]
GLACCUM, AE [1 ]
SPEIGHT, JD [1 ]
机构：
[1] BRITISH TELECOMMUN RES LABS,MARTLESHAM HLTH,IPSWICH,SUFFOLK,ENGLAND
来源：
RADIATION PHYSICS AND CHEMISTRY | 1983年 / 22卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
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页码：1050 / 1050
页数：1
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