GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS

被引：119

作者：

ENGLISH, JH

GOSSARD, AC

STORMER, HL

BALDWIN, KW

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 25期

关键词：

D O I：

10.1063/1.97710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1826 / 1828

页数：3

共 14 条

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[5] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J].

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ISHIKAWA, T .

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[6] TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN GAAS-GAALAS HETEROSTRUCTURES [J].

MENDEZ, EE ;

PRICE, PJ ;

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[7] TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY IN GAAS-ALXGA1-XAS HETEROSTRUCTURES FROM 1 TO 10 K [J].

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HWANG, JCM .

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[8] LOW-TEMPERATURE TWO-DIMENSIONAL MOBILITY OF A GAAS HETEROLAYER [J].

PRICE, PJ .

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[9] SI ATOMIC-PLANAR-DOPING IN GAAS MADE BY MOLECULAR-BEAM EPITAXY [J].

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[10]

STORMER HL, 1984, APPL PHYS LETT, V44, P139, DOI 10.1063/1.94580

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