MAPPING OF MOBILE CHARGES ON INSULATOR SURFACES WITH THE ELECTROSTATIC FORCE MICROSCOPE

被引：59

作者：

DOMANSKY, K

LENG, Y

WILLIAMS, CC

JANATA, J

PETELENZ, D

机构：

[1] UNIV UTAH, DEPT PHYS, SALT LAKE CITY, UT 84112 USA

[2] PACIFIC NW LAB, MOLEC SCI RES CTR, RICHLAND, WA 99352 USA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.110759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Migration of surface ions in lateral fields on insulator surfaces may modify the electrical characteristics of underlying semiconductor structures causing device instabilities. A high sensitivity electrostatic force microscope is used to image the movement and spatial distribution of surface ions on Si3N4. Mobile surface ions are distributed by the fringing fields of a p-n junction and an open-gate field-effect transistor. The surface charge distribution and topography are imaged simultaneously on a micrometer scale.

引用

页码：1513 / 1515

页数：3

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